摘要
叙述了采用DC磁控溅射方法直接在Si衬底上制备YBa_2Cu_3O_(7-δ)(YBCO)超导薄膜的过程;讨论了衬底温度、薄膜厚度和后处理工艺等因素的影响;研究了Si与YBCO膜之间互相扩散的情况。溅射时衬底温度630℃,后在480～500℃进行原位等离子体氧化,再缓慢降温至200℃。在Si(100)和Si(111)上得到的YBCO膜,其零电阻温度分别为63K和64K。
Factors such, as substrate temperature, film thickness, post annealing conditions in the preparation of superconducting YBa2Cu3O7-δ (YBCO) thin film on silicon directly using DC magnetron sputtering were described.Interdiffusion between YBCO film and silicon substrate was researched.The films were deposited at 630℃ and plasma oxdized at 480-500℃, then cooled down slowly to 200℃.The films on single crystal Si(100) and Si(111) exhibit zero resistance at 63 K and 64 K respectively.
出处
《低温与超导》
CAS
CSCD
北大核心
1991年第2期22-26,共5页
Cryogenics and Superconductivity
基金
国家自然科学基金
国家超导研究开发中心资助
