期刊文献+

基于空间像峰值光强差的奇像差测量技术 被引量:2

Odd Aberration Measurement Technique Based on Peak Intensity Difference of Aerial Image
原文传递
导出
摘要 提出一种基于空间像峰值光强差的光刻投影物镜奇像差测量技术。根据Hopkins部分相干成像理论,推导双缝图形空间像光强分布以及峰值光强差的解析表达式。该测量技术以双缝图形为测量标记,以空间像峰值光强差为测量对象。与基于成像位置偏移量的奇像差测量技术相比,基于峰值光强差的奇像差测量技术降低了对空间像定位精度的要求,并且高精度的光强度测量有效地提高了该技术的奇像差测量精度。利用光刻仿真软件PROLITH分析了传统照明与二极照明方式下该技术的奇像差测量精度,仿真结果表明采用二极照明具有更高的测量精度。以彗差Z7为例,在传统照明和二极照明方式下,Z7的测量精度分别达到了0.29nm与0.19nm。 An odd aberration measurement technique based on peak intensity difference of aerial image is proposed for lithographic projection lens. By using the Hopkins theory of partially coherent imaging, the analytical expressions of the aerial image and the peak intensity difference are derived for the double-slit pattern. This technique adopts a double-slit pattern as the measurement mark and the peak intensity difference of aerial image as the measurement parameter. Compared with the odd aberration measurement techniques based on image placement error (IPE), the technique based on the peak intensity difference can reduce the requirement for positioning accuracy of the aerial image, and accurate intensity measurement can improve the odd aberration measurement accuracy effectively. The odd aberration measurement accuracies under conventional illumination and dipole illumination are analyzed with PROLITH software. The simulation results show that the measurement accuracy can be further improved under dipole illumination. Taking coma Z7 as an example, the measurement accuracies are up to 0.29 nm and 0. 19 nm under conventional illumination and dipole illumination, respectively.
出处 《光学学报》 EI CAS CSCD 北大核心 2013年第5期123-129,共7页 Acta Optica Sinica
基金 国家自然科学基金(60938003 61205102 61275207)资助课题
关键词 光学制造 光刻投影物镜 波像差测量 泽尼克系数 峰值光强差 optical fabrication lithographic projection lens wavefront aberration measurement Zernikecoefficient peak intensity difference
  • 相关文献

参考文献22

  • 1Donis G. Flagello, Jan Mulkens, Christian Wagner. Optical lithography into the millennium: sensitivity to aberrations, vibration and polarization [C]. SPIE, 2000, 4000:172-183.
  • 2Paul Grhupner, Reiner Garreis, Aksel G6hnermeier et al.. Impact of wavefront errors on low kl processes at extremely high NA [C]. SPIE, 2003, 5040: 119-130.
  • 3T. A. Brunner. Impact of lens aberrations on optical lithography [J]. IBMJ. Res. Develop., 1997, 41(1):57-67.
  • 4J. J. Chen, C. M. Huang, F. J. Shiu et al.. The influence of coma effect on scanner overlay [ C ]. SPIE. 2002, 4689: 280-285.
  • 5Jinwon Sung, Mahesh Pitchumani, Eric G. Johnson. Aberration measurement of photolithographic lenses by use of hybrid diffractive photomasks [ J ]. Appl. Opt. , 2003, 42 ( 11 ):1987-1995.
  • 6Marco Moers, Hans van der Laan, Mark Zellenrath et al.. Application of the aberration ring test (ARTEMISTM) to determine lens quality and predict its lithographic performance [C]. SPIN, 2001, 4346:1379-1387.
  • 7Lifeng Duan, Xiangzhao Wang, Guanyong Yan et al.. Experimental determination of aberration in lithographic lens by aerial image [C]. SPIN, 2011, 8169:816909.
  • 8Lena Zavyalova, Bruce Smith, Toshifumi Suganaga et al.. In situ aberration monitoring using phase wheel targets [ C]. SPIN, 2004, 5377:172-184.
  • 9Hiroshi Nomura. Investigation of high-precision lithography lens aberration measurement based on three-beam interference theory: sensitivity versus coherent factor and variations with dose and focus [J]. Opt. Rev. , 2000, 7(6): 525-534.
  • 10Mingying Ma, Xiangzhao Wang, Fan Wang. Aberration measurement of proiection optics in lithographic tools based on two-beam interference theory [J]. Appl. Opt., 2006, 45(32): 8200-8208.

二级参考文献16

  • 1王帆,王向朝,马明英,张冬青,施伟杰.光刻机投影物镜像差的现场测量技术[J].激光与光电子学进展,2004,41(6):33-37. 被引量:13
  • 2李艳秋.50nm分辨力极端紫外光刻物镜光学性能研究[J].光学学报,2004,24(7):865-868. 被引量:16
  • 3Paul Graeupner, Reiner Garreis, Aksel Goehnermeier et al..Impact of wavefront errors on low k1 processes at extremely high NA[C]. Proc. SPIE, 2003, 5040: 119-130
  • 4Joost Sytsma, Hans van der Laan, Marco Moers et al.. Improved imaging metrology needed for advanced lithography [ J ].Semiconductor International, 2001
  • 5T, A, Brunner, lmpact of lens aberrations on optical lithography[J]. IBMJ. Res. Develop, 1997, 41(1): 57-67
  • 6J. J. Chen, C. M. Huang, F. J. Shiuet al.. Influence of coma effect on scanner overlay [C]. Proc. SPIE, 2002, 4659:280-285
  • 7Hideo Hata, Hideki Nogawa, Shigeyuki Suda. Development of 157-nm full-field scanners [C]. Proc. SPIE. 2004, 5377:806-815
  • 8Kafai Lai, Gregg Gallatin, Mark van de Kerkhof et al.. New paradigm in lens metrology for lithographic scanner: evaluation and exploration[C]. Proc. SPIE, 2004, 5377: 160-171
  • 9Yuji Chiba, Kazuhiro Takahashi. New-generation projection optics for ArF lithography[C].Proc. SPIE, 2002, 4691:679-686
  • 10H. Nomura, T. Sato. Techniques for measuring aberrations inlenses used in photolithography with printed patterns[J]. Appl.Opt. , 1999, 38(13): 2800-2807

共引文献3

同被引文献3

引证文献2

二级引证文献9

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部