摘要
极端紫外光刻 (EUVL)作为实现 10 0～ 32nm特征尺寸微细加工的优选技术 ,其光刻物镜的光学性能是实现高分辨图形制作的关键。利用光学设计软件CODEV对 6枚非球面反射镜构成的光刻物镜设计和光学性能分析 ,其分辨力可以实现 5 0nm ,曝光面积为 2 6mm× 1mm。结果表明 ,光学性能对曝光场点的依赖关系。在全曝光场中进行了光学性能分析 ,其最大畸变为 3.77nm ,最大波面差为 0 .0 31λ(均方根值 ) 。
Extreme ultraviolet lithography (EUVL) is one of the promising technologies for the fabrication of critical dimension of 100～32 nm. The optical performance of projection optics is most important to realize the fabrication of high resolution pattern. The design of 6 mirror projection optics of extremes\|ultraviolet lithography is presented and the optical performance is analyted by using optical design softwave CODE V. The resolution can reach 50 nm and the exposure area is 26 mm×1 mm. The performance of optics depends on the field points of the exposure area. The optical evaluation of optics is completed at full exposure area. The maximum distortion of 3.77 nm and the maximum wavefront error of 0.031λ (root mean square) can be reached. This projection optics can fully meet the requirements of EUVL for next generation.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2004年第7期865-868,共4页
Acta Optica Sinica
基金
中国科学院"引进国外杰出人才"2 0 0 1年资助课题
关键词
应用光学
光学设计
极端紫外光刻
下一代光刻
applied optics
optical design
extreme-ultraviolet lithography
next-generation lithography
