摘要
以三甲基铝(TMA)和水为反应源,采用原子层沉积(ALD)技术在n型单晶硅表面沉积15nm、30nm和100nm的Al2O3薄膜,并对样品进行快速退火(RTA)处理。采用少子寿命测试仪测试样品的有效少子寿命,获得了表面复合速率(SRV),通过X射线光电子能谱(XPS)分析了薄膜的化学成分,在此基础上研究了薄膜厚度及退火条件对钝化效果的影响,并分析了钝化机理。结果表明:ALD技术制备的Al2O3薄膜经退火后可使n型单晶硅SRV值降低到7cm/s,表面钝化效果显著。
Al2O3 thin films with the thickness of 15 nm, 30 nm and 100 nm were synthesized by thermal atomic layer deposition （ALD） using Al（CHa ）a and H2O as sources. The surface passivation of n-type monocrystalline silicon was studied. After receiving rapid therrnal annealing, the impact of film thickness and annealing conditions on the pas- sivation performance was investigated. The passivation mechanism was analyzed through characterizing the effective minority carrier lifetime, surface recombination velocities and X-ray photoelectron spectroscopy （XPS）. It is shown that a high level surface passivation was addressed by post-deposition annealed Al2O3 thin films with an effective sur- face recombination velocity of 7 cm/s.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2013年第8期40-43,共4页
Materials Reports
基金
国家自然科学基金(11104288)
宁波市自然科学基金(2011A610202)
关键词
太阳能电池
晶体硅钝化
原子层沉积
AL2O3薄膜
solar cell, crystalline silicon passivation, atomic layer deposition, Al2 O3 thin film
