摘要
本文采用数值计算和解析分析相结合的方法 ,建立了新型功率半导体器件——双极型压控晶体管 (BJMOSFET)电流 -电压特性的数值分析模型 ;运用 Mathematics数学分析软件 ,模拟得出 BJMOSFET电压转移特性曲线和电压输出特性曲线 ;得出的结果说明在相同的器件结构尺寸和工作情况下 ,与功率MOS晶体管相比 ,导通电压略有增加 ,但电流容量增加较大。
Based on the numerical and analytical method, the I V characteristics′ numerical model has been obtained for the bipolar voltage control transistor that is a novel device. Appling the software package of Mathematic, we have simulated both the voltage transfer and the voltage output characteristically graphs of BJMOSFET. The results show that BJMOSFET has a larger current capacity than the power MOSFET under the same operating conditions and structure parameters, only the threshold voltage is increased a little.
出处
《电子器件》
EI
CAS
2000年第3期204-209,共6页
Chinese Journal of Electron Devices
