摘要
讨论了MCT的结构设计及耐压设计.通过对结构参数的最佳化选择,制造出开关电流9A,耐压900V的MCT芯片.n沟MOS阈值电压为2V,p沟MOS阈值电压为-5V.当门极加-7V电压时,其关断电流密度为220A/cm^2.
The geometries and the junction terminal technology of MOS controlled thyristors are analysed. 9A,900V MCT die has been fabricated through the optimum design. The threshold voltages of n-MOSFET and p-MOSFET are 2V and 5V respectively. It can be turned off with current density of 220A/cm at a gate bias of 7V.
出处
《电力电子技术》
CSCD
北大核心
1994年第1期55-57,共3页
Power Electronics
