摘要
本文报导了采用国产MOCVD装置和MO源材料生长GaAs、GaALAs多层结构的实验情况,探索MOCVD装置和MO源材料全部国产化的途径,初步获得比较满意的结果,为器件的研究奠定初步基础。
This paper reported exerimental growing instance about poly—layers instuction of GaAlAs, GaAlAs imployed MOCVD eguipment and MO materils made in China. The way that all of MOCVD eguipment and MO materials is made by China is explored. The fundamentals for research of devices is established.
出处
《长春光学精密机械学院学报》
1991年第2期19-20,共2页
Journal of Changchun Institute of Optics and Fine Mechanics
