Band Structure and Electron Transport of Bulk Based on an Ensemble Monte Carlo Calculation
Band Structure and Electron Transport of Bulk Based on an Ensemble Monte Carlo Calculation
摘要
The current demand growth of new components capable of operating at high power, high frequency, high temperatures and convergence towards miniaturization has lead to the development of new fields of nanotechnology based on II-VI semiconductor Interest in nanostructure：s based on II-VI semiconductor narrow gap containing mercury （such as super lattices HgTe/CdTe） was due to their advantages over alloys with cadmium telluride Mercury （MCT： HgCdTe）. The ternary alloy is a semiconductor band-gap direct, in that work the main interest is about the ternary compound. The results obtained are very satisfactory, they are compared with experimental results, and are in good agreement. These results are very promising and open new perspectives for the realization of solar cells and applications in the field of sensors.
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