摘要
随着高Ga组分Ⅲ族氮化物相关研究的日趋深入和生长技术的日益成熟,人们逐渐将研究重心转向具有更宽带隙的高Al组分Ⅲ族氮化物。该材料常温下带隙宽至6.2 eV,可覆盖短至210 nm的深紫外波长范围,具有耐高温、抗辐射、波长易调控等独特优点,因而是制备紫外发光器件的理想材料。目前,高Al组分Ⅲ族氮化物材料质量不高,所制备的深紫外LED发光器件仍存在内量子效率、载流子注入效率和沿c轴方向正面出光效率较低的难题,因而制约了高效紫外发光器件的制备。本文着重介绍了近年来在高Al组分Ⅲ族氮化物生长动力学方面的研究进展,总结和梳理了量子结构设计、内电场调控以及晶体场调控等方面的相关研究,以期实现高质量深紫外LED的制备。
Along with the extensive investigations and growth technology maturation on high Ga content Ⅲ-nitrides, researchers have moved their focus onto high Al content Ⅲ-nitrides. Giyen a wider band gap up to 6.2 eV at room temperature, covering UV-light area as short as 210 nm, as well as other advantages of Ⅲ-nitrides, high AI content Ⅲ-nitrides are ideal materials for the fabrication of UV-light emitting devices. At present, there are certain challenges in the fabrication of UV-light emitting devices with high internal quantum ：efficiency, carrier injection efficiency and light-extraction efficiency due to the low quality materials. In this work, the progress on growth kinetics of high Al content Ⅲ-nitrides in recent years has been reviewed comprehensively, and the corresponding researches in quantum structure design, internal electric field modification and crystalline field modification have been overviewed and analyzed. This review is expected to be informative for the fabrication of deep UV-LEDs.
出处
《物理学进展》
CSCD
北大核心
2013年第2期43-56,共14页
Progress In Physics
基金
"973"规划项目(2012CB619301
2011CB25600)
"863"计划项目(2011AA03A111)
国家自然科学基金项目(61227009
90921002)
中央高校基本科研业务费专项资金资助项目(2012121014
CXB2011029)
福建省自然科学基金计划项目(2012J01024)
