摘要
在〈10 0〉和〈111〉硅衬底上 ,用超临界干燥方法制备了超高多孔度的多孔硅 (多孔度大于90 % ) ,并对其光致发光和光致发光激发以及结构进行了研究 .发现光致发光峰位随多孔度增加而蓝移的数值远小于量子限制模型预期的结果 .
We used supercritical drying to prepare porous silicon on〈100〉and 〈111〉Si substrate with ultra high porosity (>90%),and studied the photoluminescence(PL) and photoluminescence emission(PLE),as well as structure comparison from the porous silicon with ultra high porosity.The experimental result shows that the PL peak position does not blue shift much as the prediction from the quantum confinement model with the porosity of porous silicon increasing.
出处
《西北师范大学学报（自然科学版）》
CAS
2000年第4期36-41,共6页
Journal of Northwest Normal University(Natural Science)
基金
国家博士后基金资助项目!(9557)
甘肃省教委科研资助项目!(981 17)
