摘要
采用直流反应磁控溅射在具有双轴织构的Ni-5%W基底上快速沉积了Y2O3种子层,随后外延生长GdxZr1-xOy(x=0.5,0.1)和YSZ三种阻挡层。研究表明,Y2O3能扩大和稳定后续薄膜的工艺窗口。X射线衍射(XRD)和原子力显微镜(AFM)分析结果表明,三种薄膜c轴织构良好、表面平整致密,其中GSZ(x=0.5)具有最好的面内织构和表面形貌,面内半高宽(FWHM)5.8°,均方根粗糙度(RMS)1.6 nm。
Y203 seed layers were prepared on biaxially textured Ni- 5% W alloy substrates by DC magnetic reactive sputte- ring. Subsequently a series of RSZ（ R = Y, Gd） barrier layers were deposited on these Y2O3 - buffered substrates using the same system. The Y2 03 seed layers enhanced the barrier layers epi - grown evidently. All the buffer layers showed pure c - axis orien- tation with the full width half maximum （FWHM） of the φ - scan about 6°. The surface morphologies characterized by optical microscope（OM） and atomic force microscopy （AFM）were quite dense and crack- free with the root mean square （RMS） roughness less than 3 nm. In addition, the structure of GSZ （ x = O. 5 ）/Y2 03 showed a larger PH2O pressure ranges for bi - axial texture.
出处
《低温与超导》
CAS
北大核心
2013年第3期44-48,共5页
Cryogenics and Superconductivity
基金
国家自然科学基金(11174193)
上海市科委(11dz1100302)
国家"973"项目(2011CBA00105)
国家"863"项目(2009AA03Z204)资助
关键词
直流反应溅射
双轴织构
涂层导体
缓冲层
DC reactive sputtering, Biaxial texture, Coated conductor, Buffer layer
