摘要
用直流平面磁控反应溅射制备了含氢非晶态碳膜（α－Ｃ：Ｈ），在０．３５－２．５μｍ波长范围内确定了它的光学常数ｎ，ｋ与禁带宽度，包括刚沉积（ＡＤ）与经真空烘烤４５０℃４０ｍｉｎ（ＨＴ）的α－Ｃ：Ｈ膜。红外透射谱、拉曼光谱与电子衍射等分析表明：α－Ｃ：Ｈ为无定形碳与金刚石共存物。热处理后，Ｃ－Ｈ与Ｃ＝Ｏ键减少，而Ｃ＝Ｃ键增加。α－Ｃ：Ｈ作为减反射膜的α－Ｃ：Ｈ／渐变ＳＳ－Ｃ／Ａｌ选择性吸收表面，具有太阳吸收率α≈０．９３（ＨＴ）．发射率ε≈０．０６（８０℃）。
Amorphous hydrogenated carbon (α-C:H) films were prepared by using the D.C. planar magnetron reactive sputtering techniques. Optical constants and semiconductor energy gap were determined for as-deposited films and films heat-treated in vacuum at 450℃ for 40 min.IR transmittances,Raman spectrum and electron diffraction analyses show that α-C:H film is composed of amorphous hydrogenated carbon and diamond materials. C-H and C=O bondings decrease,and C=C bondings increase for heattreated α-C: H films. α-C:H/graded SS-C/Al selective absorbing sur face, α-C:H as an antireflection layer, has solar absorptance approximately 0.93(HT)and emittance about 0.06 (at 80℃).
出处
《清华大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
1989年第1期101-106,共6页
Journal of Tsinghua University(Science and Technology)
关键词
溅射
非晶态
碳
薄膜
sputtering, amorphous, carbon, film
