摘要
用溶胶-凝胶 (Sol Gel)方法制备了有PbTiO3(PT)过渡层的硅基Pb(Zr0 .5 3Ti0 .47)O3(PZT)铁电薄膜 ,顶电极和底电极分别为溅射的金属钛铂层和低阻硅。在低温退火条件下得到了晶化很完善的铁电薄膜。测试结果表明有PT过渡层的铁电薄膜具有良好的铁电和介电性能。
Ferroelectric Pb(Zr 0.53 Ti 0.47 )O 3(PZT) thin films with PbTiO 3(PT) buffer layer were fabricated on silicon substrstes by Sol Gel method. The top electrode is Pt/Ti and the bottom electrode is low resistance silicon. The well crystallized thin films were prepared under low annealing temperature. Experimental results showed that the PZT thin films with PT buffer layer had good ferroelectric and dielectric properties.
出处
《微细加工技术》
2000年第4期36-39,共4页
Microfabrication Technology
基金
国家自然科学基金资助项目!( 6980 60 0 7)
