摘要
文中以LaAlO3为衬底,制作了一层Tl-2212高温超导薄膜,并在薄膜上生长一层较薄的CeO2缓冲层,然后再在上面生长一层Tl-2212高温超导薄膜。经过测量,研究了多层膜结构对超导薄膜临界电流密度的影响。结果显示,在缓冲层的结晶过程中超导薄膜的晶格受到影响,结晶过程中的处理很容易诱导上面一层Tl-2212超导薄膜产生杂相,导致临界电流密度降低。
In this paper,Tl-2212 high temperature superconducting thin film was produced on LaAlO3 substrate,then CeO2 buffer layer was produced on the film,and then another Tl-2212 superconducting thin film on the buffer layer.The effect on critical current density of superconducting film of multilayered structure was studied.And the results show that during the crystallization of buffer layer the crystal of superconducting thin film was destroyed,where the impure phase of the Tl-2212 thin film on it was produced,causing the decrease of the critical current density.
出处
《低温与超导》
CAS
北大核心
2013年第2期19-22,74,共5页
Cryogenics and Superconductivity
基金
国家自然科学基金项目(61101018
51002081
61171028
61176119)
中央高校基本科研业务费专项资金资助
关键词
高温超导薄膜
磁通钉扎
多层膜
临界电流密度
T1-2212
High-temperature superconducting thin films
Pinning
Multilayered film
Critical current density
Tl-2212
