摘要
从热力学和动力学角度研究了亚微米级SiC粉体的氧化过程 ,结果表明 :当温度低于 80 0℃ ,亚微米级的SiC粉体很难在空气中氧化 ;但在较高温度下 (90 0～ 12 0 0℃ )极易氧化 ,且服从抛物线速度方程 ,受氧气通过SiO2 氧化膜的内扩散控制 ,反应的平均表观活化能为 143.4kJ/mol。
The oxidation of silicon carbide was investigated from both thermodynamic and kinetics aspects. The results indicated that the oxidation of silicon carbide is very easy to take place in the oxygen atmosphere at high temperature. It was postulated that the inward diffusion of oxygen through the growing silicon dioxide layer formed on the surface of silicon carbide particles during oxidation period, is the rate determining step. The apparent activation energy in this process was also obtained as 143.4 kJ/mol over the temperature range from 1 173.15 K to 1 473.15 K.
出处
《中国有色金属学报》
EI
CAS
CSCD
北大核心
2000年第4期560-563,共4页
The Chinese Journal of Nonferrous Metals
