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光化学汽相沉积中光激活物质的理论解析 被引量:3

THEORETICAL ANALYSES OF PHOTO-ACTIVATION SPECIES IN PHOTO-CVD
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摘要 基于光激活物质空间迁移长度的概念,推导出方形反应空间中到达基片上单位面积的光激活物质总数的解析表达式,对光化学汽相沉积中淀积速率和基片位置的关系进行了模拟和分析. 模拟结果同实验结果符合良好. Based on the concept of space migration length of photo activation species,the analytical expression of the total number N of photo activation species that can reach a segment on the substrate in the cubic deposition reaction space is derived.The simulation of the relationship of deposition rate and position of substrate is also completed.The simulation result agrees with the experiment data well.
出处 《光子学报》 EI CAS CSCD 2000年第1期78-81,共4页 Acta Photonica Sinica
关键词 迁移长度 半导体 光激活物质 光化学汽相沉积 Photo activation PHOTO CVD Migration length
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参考文献4

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  • 2Tao Meng,Thin Solid Films,1997年,307卷,1期,71页
  • 3Jang Syunming,J Electrochem Soc,1995年,142卷,10期,3513页
  • 4Lin Horngchih,Appl Phys Lett,1993年,63卷,10期,1351页

同被引文献12

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  • 9成步文,李代宗,黄昌俊,于卓,张春晖,王玉田,余金中,王启明.UHV/CVD生长SiGe/Si异质结构材料[J].Journal of Semiconductors,2000,21(3):250-254. 被引量:9
  • 10罗广礼,林小峰,刘志农,陈培毅,林惠旺,钱佩信,刘安生.弛豫SiGe外延层的UHV/CVD生长[J].Journal of Semiconductors,2000,21(7):682-685. 被引量:5

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