摘要
用二维器件仿真软件MEDICI模拟分析了N型槽栅金属 氧化物 半导体场效应晶体管的热载流子特性及其对器件性能所造成的损伤 ,并与相应常规平面器件进行了比较 ,同时用器件内部物理量的分布对造成两种结构器件特性不同的原因进行了解释 .结果表明槽栅器件对热载流子效应有明显的抑制作用 ,但槽栅器件对热载流子损伤的反应较平面器件敏感 .
In this paper,the hot\|carrier effect in grooved gate NMOSFET and the device degradation induced by it were simulated using device simulator MEDICI,and compared with those of counter conventional planar device.The hot\|carrier effect and the device degradation were explained using the distribution of some internal physical parameters.The simulation results indicated that hot\|carrier effect was strongly suppressed in grooved gate MOSFET,while grooved gate MOS FET's performance was sensitive to hot carrier.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第7期1241-1248,共8页
Acta Physica Sinica
基金
高等学校博士学科点专项基金! (批准号 :80 70 110 )
关键词
槽栅MOSFET
热载流子效应
N型
grooved\|gate MOSFET, hot\|carrier\|effect, interface state, performance degradation
