摘要
随着ＶＬＳＩ器件尺寸越来越小，槽栅ＭＯＳ器件被作为在深亚微米及亚０．１μｍ范围极具应用前景的理想结构被提了出来。文中介绍了槽栅器件提出的背景，论述了槽栅 ＭＯＳ器件的结构与特点，并就其发展现状和趋势以及存在的问题进行了概括和总结。
To achieve higher speed and packing densities,the size of MOSFET has been continuously scaled down. The grooved gate MOSFET (GR MOSFET)has been developed as a promising candidate for use in the deep sub-micron and sub-0. 1m regime. The structure and performance of GR MOSFET's are discussed in the paper. The state-of-the-art of GR MOSFET's is described. The trend of the development of GR MOSFET's is summarized.
出处
《微电子学》
CAS
CSCD
北大核心
2000年第4期258-262,共5页
Microelectronics
基金
国防预研基金资助项目
