摘要
应用腔量子电动力学和半导体物理学讨论了半导体垂直腔面发射激光器的微腔效应 ,得到了实际腔结构和注入载流子下的半导体垂直腔面发射激光器的自发发射谱 ,计算结果表明 ,半导体分布布拉格反射垂直腔激光器的单方向自发发射可以增强约 2 0 0倍。
Based on cavity quantum electrodynamics and physics of semiconductor,the mi- cro- cavity effect in a vertical cavity semiconductor surface emitting laser has been discussed. The spontaneous emission spectra in the vertical cavity semiconductor surface emitting lasers are obtained.As a result,spontaneous emission intensity in one direction can be enhanced about2 0 0 times by the confinement the photon with distributed Bragg reflectors because the micro- cavity effect in the lasers.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2000年第5期592-596,共5页
Acta Optica Sinica
基金
北京市自然科学基金资助项目!(4 972 0 0 6 )
关键词
半导体垂直腔面发射激光器
自发发射
微腔效应
vertical cavity semiconductor surface emitting lasers, spontaneous emission, metal reflector, distributed Bragg reflectors
