摘要
本文报道GaAs∶Cr中Cr^(4+)(3d^2)态的光激发电子顺磁共振(EPR)研究结果.实验表明,Cr_(4+)的EPR信号强度对温度关系在20-30K间达极大值.中子辐照能抑制Cr^(4+)的EPR信号,但对Cr^(2+)的EPR信号基本无影响.实验首次发现Cr^(4+)EPR信号在光照停止后先陡然增大然后逐渐下降,而不是光照停止后随即单调下降的现象.
The photo-EPR Study of Cr^(4+) in Semi-insulated GaAs:Cr is reported.Theexperimental results show that there is a maximum of the Cr^(4+) EPR signal amplirude as a function of temperature in the temperature range 20-30K.It is disco-vered for the first time that after turning off the white light the Cr^(4+) EPR signalincreased before coming to decay.The neutron irradiation can restrain the Cr^(4+)EPR signal, but almost has no influence on the Cr^(2+) signal.
关键词
砷化镓
深能级
电子
顺磁共振
Deep levels in semiconductors
Chromium in gallium arsenide
Electron paramagnetic resonance
