摘要
本文采用统计方法,对40K下金过补偿的P型硅单晶的动态光伏问题进行处理.计算结果与实验符合很好,从而探讨了硅中金受主能级在光离化、载流子复合过程中的行为,进而估算了金受主能级在hv=0.63eV光照下的光离化截面σ_i=6×10^(18)cm^2,及其对自由空穴的俘获截面σ_p=4×10^(15)cm^2.
The dynamic photovoltaic effect of p-type Si single crystal supercompensated by gold at40 K is studied using the statistical method. The calculated results are in good agreement withthe experimental results.Consequently, the photoionization and carrier recombination of goldacceptor in silicon are approached. The capture cross section of holes with σ=4×10^(-15)cm^2and the photoionization cross section with σ=6×10^(-18)cm^2 under hv=0.63eV illumination areestimated.
基金
国家自然科学基金
关键词
硅
金受主能级
动态光伏
统计法
Silicon
Gold Acceptor
Dynamic photovoltaic effect
low temperatures
statistical method
