摘要
单晶,多晶,微晶及非晶硅是固态硅材料中几种重要的组建结构.随着非晶硅晶化研究的深入,定量的研究其微观尺度的变化(键角变化△θ,微晶晶粒尺度△d)已日趋必要,而光散射手段为此提供了可能.非晶硅喇曼谱中类TO模的峰位变化(△ω_R)为微晶硅晶粒尺度提供了数据△d～2π(B/△ω_R)^(1/2)(B是材料的结构参数),类TO模峰陡边的半高峰宽,又为每个键的平均畸变能U=3K(r_(b*)△θ)~2提供了一定的信息.文中对与之相关的物理过程亦做了相应的讨论.
The microsize of silicon material, e.g. the average distortion energy U per bond, rmsbong-angle deviation have been quantitatively studied. Some of the microstructure inform-ation of doping boron complex in amorphous silicon have been provided by the change of theTO-like mode relative to the single crystal in Raman spectra.The reliable data and parame-ters for crystallite silicon can be offered during the process of the crystallization.
基金
固体微结构实验室的专题且获现代分析中心1989年度部分资助
