摘要
本文介绍了研制异质结双极晶体管(HBT)的工艺过程。使用MOCVD生长的GaAlAs/GaAs多层结构外延材料,采用离子注入隔离和湿法腐蚀技术,实现基极与发射极台面自对准工艺,研制出截止频率为22GHz的HBT。
This paper describes the technological prpcess of heterojunctlon bipolar transistors (HBT). Using GaAlAs/GaAs multilayer epitaxial materials grown by MOCVD, adopting ion implantation isolation and wet etching,and realizing a self-align- ment process of base to emitter mesa, the HBT with high cutoff frequency of 22GHz was developed.
出处
《半导体情报》
1991年第5期46-49,11,共5页
Semiconductor Information
关键词
异质结
双极晶体管
工艺
Bipolar Transistor
Heterojunction
Semiconductor technology
