摘要
本文介绍了用MBE技术制作半导体超晶格和量子阱材料的进展,以及在高速电子器件和光学器件方面的应用。
In this paper,we presented recent advance on semiconductor superlattice and quantum well materials with MBE technique,and the applications of these materials in high-speed electronic devices and photoelectric devices.
出处
《半导体情报》
1991年第3期1-12,共12页
Semiconductor Information
关键词
半导材料
量子阱
超晶格
Superlattice semiconductor
Photoelectric device
Electronic device
