摘要
采用射频磁控溅射技术,室温下在PET柔性衬底上沉积不同厚度的掺锡氧化铟(ITO)薄膜,样品的结构、形貌和光电学性质分别用X射线衍射仪、原子力显微镜、分光光度计和Van der Pauw方法测量.实验结果表明:在其它参数不变的条件下,随着溅射时间的增加薄膜的厚度增大,而薄膜的颗粒大小和表面粗糙度也随之变大;方块电阻、电阻率随样品厚度的增加而减小,相应的迁移率减少,载流子浓度变大.当样品厚度为148 nm时,样品的方块电阻为26.5Ω·□-1、迁移率为19.1 cm2·V-1·s-1、载流子浓度为8.43×1020cm-3.
Indium tin oxide （ITO） thin films with different thicknesses were prepared on poly- ethylene terephthalate （PET） substrates by RF magnetron sputtering at room temperature. The structure, morphology, electrical, and optical properties of the films were investigated by X-ray diffraction, atomic force microscopy, spectrophotometer, and Van der pauw method, respectively. The experimental results show that the surface grain size, roughness, and carrier concentration of the films increase with the increase of thickness. The sheet resistance, Hall mobility, and transmittance decrease as the film thickness increases. When the thickness is 148 nm, the sheet resistance is 26.5Ω·□-1, mobility is 19.1cm2·V·s-1, and carrier concentration is 8.43×10^20cm-3.
出处
《福建师范大学学报（自然科学版）》
CAS
CSCD
北大核心
2013年第1期48-52,共5页
Journal of Fujian Normal University：Natural Science Edition
基金
国家自然科学基金资助项目(11074041)
福建师范大学优秀青年骨干教师培养基金(fjsdjx2012011)
关键词
掺锡氧化铟薄膜
PET柔性衬底
厚度
磁控溅射
光电学性质
indium tin oxide （ITO）
PET substrates
thickness
magnetron sputtering
optical and electrical properties
