摘要
随着大规模集成电路的快速发展,硅片表面微粗糙度对于器件制造的影响也越来越受到人们的重视。介绍了几种测量硅片表面微粗糙度的测试方法,并将它们分成三类,简单阐述了每一类测试方法的测试原理,影响测试结果的因素,从实际应用的角度详细阐述了这三类测试方法的适用情况、通过详细的测试数据及图形对这三类测试方法进行了分析,并对这三类测试方法进行了比较。最后简单介绍了纳米形貌和硅片表面微粗糙度之间的关系。
The effect of surface roughness of planar surface on silicon wafer to device construction has been paid more attention than before with the rapid development of ULSI. This article described three types of measurement test methods, testing principle and the factors that affect the test resuhs of every type of method. From a practical point of view, the application conditions of these three types of test methods were elaborated. These test methods were analysed by detailed test data and graphics and were compared with earch other. Finally the relationship between nanotopography and silicon surface roughness was briefly introduced.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2009年第6期884-888,共5页
Chinese Journal of Rare Metals
关键词
表面微粗糙度
测量
硅片
surface roughness of planar surface
measurement
silicon wafer
