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HgI_2同质外延薄膜的气相生长和探测器性能 被引量：4

Study on Iso-Epitaxy Vapor Growth of HgI_2 Film and Its Detectors
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摘要 为提高HgI2晶体气相定向生长效果,在ITO导电玻璃上从DSMO-HgI2-H2O溶液中过饱和析出HgI2外延衬底,进而在外延衬底上气相沉积HgI2多晶薄膜并制备了相应的探测器。利用SEM、XRD分析了薄膜的定向生长特性;以241Am为放射源,在室温下测试了探测器的探测效率。 In order to improve the orientated growth of HgI2 films in vapor, iso - epitaxy layers of poly- crystalline mercuric iodide were deposited on ITO conductive glass by DSMO -HgI2 -H2O solvent evapo- ration, polycrystalline HgI2 films were then grown on iso - epitaxy layers by PVD. The films grew were investigated by SEM and XRD. The polycrystalline HgI2 films detectors fabricated was studied by an un- collimated 241Am radiative source with the principal energy of 59.5keV at room temperature.
作者 许岗 谷智 魏淑敏
机构地区 西安工业大学材料与化工学院 西北工业大学凝固技术国家重点实验室
出处 《功能材料与器件学报》 CAS CSCD 北大核心 2012年第5期426-430,共5页 Journal of Functional Materials and Devices
基金 西安工业大学凝固理论与功能材料科研创新团队基金 西北工业大学基础研究基金(JC20110244)
关键词 碘化汞 多晶薄膜 同质外延 定向生长 探测器 mercuric iodide polycrystalline films iso - epitaxy orientated growth detectors
分类号 O484.1 [理学—固体物理]
  • 相关文献

参考文献21

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二级参考文献35

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共引文献8

同被引文献45

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引证文献4

二级引证文献3

功能材料与器件学报
2012年 第5期

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