摘要
采用X-射线衍射(包括小角度衍射方法)研究了低温气相生长金刚石薄膜和单晶硅衬底之间的界面过度层。发现在较高温度下(700℃)过渡层为α-SiC,在较低沉积温度范围(580-290)℃过渡层则由α-SiC和SiO_2所构成。对界面层中α-SiC和SiO_2的晶体结构以及金刚石薄膜面间距进行了讨论。
The constituent and the structure of the interface layer between the low temperature deposited diamond films and the single crystal silicon substrate was studed by X-ray diffraction (including small angle diffraction) technique. It was found that the interface layer for diamond film deposited at 700℃ was α-SiC. At lower temperature range (580-290)℃, the interface layer was composed of α-SiC and SiO2. Crystal structure of α-SiC and SiO2, and the d-spacings of the diamond films were discussed.
出处
《北京科技大学学报》
EI
CAS
CSCD
北大核心
1992年第4期423-429,共7页
Journal of University of Science and Technology Beijing
基金
高技术新材料领域专家委员会资助项目
关键词
金刚石薄膜
界面
X-射线
衍射
薄膜
diamond films, low temperature deposition, iaterface layer, X-ray diffraction
