摘要
4H silicon carbide（4H-SiC） junction barrier Schottky（JBS） diode with breakdown voltage higher than 2.7 kV and active area of 2.8 mm2 has been successfully fabricated.The design,the fabrication,and the electrical characteristics are reported.Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique.The epilayer properties of the N-type are 18μm with a doping of 3.5×1015 cm-3.The diodes are fabricated with a floating guard rings edge termination.The on-state voltage is 2.15 V at Jf=350 A·cm-2.
4H silicon carbide （4H-SiC） junction barrier Schottky （JBS） diode with breakdown voltage higher than 2.7 kV and active area of 2.8 mm2 has been successfully fabricated.The design, the fabrication, and the electrical characteris- tics are reported.Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique.The epilayer properties of the N-type are 18 μm with a dop- ing of 3.5×1015 cm-3.The diodes are fabricated with a floating guard tings edge termination.The on-state voltage is 2.15 V at Jf =350 A.cm-2.
出处
《电力电子技术》
CSCD
北大核心
2012年第12期72-73,共2页
Power Electronics
关键词
JBS
电力电子技术
MOSFET
晶体管
4H silicon carbide
junction barrier Sehottky diode
edge termination
floating guard rings
