摘要
简要地回顾和探讨了垂直型功率Trench金属氧化层半导体场效晶体管(MOSFET)器件(即Trench MOS)的技术发展及其当前工业化生产水平。重点讨论了适用于工业界大规模生产的,能同时降低正向导通损耗和瞬态开关损耗的器件结构和制造工艺,并举例给出了目前工业界最先进30 V Trench MOS产品综合技术指标(FOM)的比较。最后,讨论了沟槽技术在基于SiC材料的功率MOSFET器件生产中的应用。
The technology progressive development and the industrial production status of trench-gated vertical power metal-oxide-semiconductor field-effect transistor（MOSFET） are briefly reviewed and discussed.The emphases are given to the techniques for minimizing both condition loss and switching loss with good industrialization yield for mass production.The latest figure of merit （FOM） of 30 V Trench MOS products is presented as example for technology comparison.Finally,the utilization of trench technology in the production of SiC based power MOSFET is discussed.
出处
《电力电子技术》
CSCD
北大核心
2012年第12期18-21,共4页
Power Electronics
关键词
金属氧化层半导体场效晶体管
工业化技术
综合技术指标
metal-oxide-semiconductor field-effect transistor
industrialization technology
figure of merit
