摘要
A low drift current reference based on PMOS temperature correction technology is proposed.To achieve the minimum temperature coefficient(TC),the PMOS cascode current mirror is designed as a cross structure.By exchanging the bias for two layers of the self-biased PMOS cascode structure,the upper PMOS,which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure,is forced to work in the linear region.As the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy,it was designed using a CSMC 1 μm 40 V BCD process.Simulation shows that the TC of the reference current was only 23.8×10 6 /°C over the temperature range of 40-120 °C under the typical condition.
A low drift current reference based on PMOS temperature correction technology is proposed.To achieve the minimum temperature coefficient（TC）,the PMOS cascode current mirror is designed as a cross structure.By exchanging the bias for two layers of the self-biased PMOS cascode structure,the upper PMOS,which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure,is forced to work in the linear region.As the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy,it was designed using a CSMC 1 μm 40 V BCD process.Simulation shows that the TC of the reference current was only 23.8×10 6 /°C over the temperature range of 40-120 °C under the typical condition.
