摘要
建立了2 5 2 Cf裂片源模拟空间重离子的单粒子烧毁 (SEB)和单粒子栅穿 (SEGR)效应的实验方法和测试装置 ,并利用该装置进行了功率MOS场效应晶体管的SEB、SEGR效应研究 ,给出了被测试器件SEB、SEGR效应的损伤阈值。结果表明 ,该测试系统和实验方法是可行、可靠的。
A study to determine the single event burnout (SEB) and single event gate rupture (SEGR) sensitivities of power MOSFET devices is carried out by exposure to fission fragments from 252 Cf source. Presented are, the test method, test results, a description of observed burnout current waveforms and a disscusion of a possible failure mechanism. The test results include the observed dependence upon applied drain or gate to source bias and effect of external capacitors and limited resistors.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2000年第4期339-343,共5页
Atomic Energy Science and Technology
