摘要
用Si分子束外延技术在 GaP(Ⅲ)衬底上生长Si时,发现Si外延层表面存在P偏析,根据俄歇电子能谱(AES),反射式高能电子衍射(RHEED)在一系列不同实验条件下的结果,本文对P偏析产生的机制、外延层表面再构与P偏析之间的关系作了分析和讨论,得出偏析主要来自外延Si原子与衬底P元素之间的相互交换。在此基础上提出了一种能有效地抑制P偏析同时又改善外延层质量的新的Si/GaP(Ⅲ)异质结制备方法。
The segregation of P from substrate to the surface of Si epilayer has been observed during MBE preparation of Si/GaP (111) heterostructure. In this paper, the mechanism of P segregation and relationship between the surface reconstruction and segregation are discussed, according to the results of AES and RHEED under different experimental conditions. The conclusion is that the segregation of P was caused by substituting P atom with Si deposited atom during growth. From this, a new method for eliminating the segregation of P efficiently is proposed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1990年第9期1429-1434,T001,共7页
Acta Physica Sinica
基金
国家自然科学基金
国家教育委员会博士点基金资助的课题
