摘要
采用金相分析方法研究了锗单晶的位错,腐蚀试剂的选择对位错的显示有较大影响。实验表明,铁氰化钾腐蚀液能清晰地显示出锗单晶的位错,其位错腐蚀坑的形状是三角形,经过计算,锗单晶的位错密度大约为11 339根/cm2。
The dislocation of germanium single crystal was studied by metallographic examination method.The test indicate that the exhibition of the dislocation would be affected by corrosive agents.The exhibition of the dislocation was clear when the crystal was corroded by the potassium ferricyanide cor rosive agents.Shape of dislocation corrosive pit was triangle,The dislocation desity was 11 339root/cm2 by calculation.
出处
《电子质量》
2012年第11期66-67,共2页
Electronics Quality
关键词
锗单晶
位错形状和密度
金相分析
Germanium single crystal
Dislocation shape and density
Metallographic examination
