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X射线法测量锗单晶的应力 被引量:4

GE SINGLE CRYSTAL STRESS MEASUREMENT BY X-RAY METHOD
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摘要 采用Hiroshi Suzuki等人提出的新的单晶应力测量原理,结合不对称布拉格衍射技术,对锗单晶的应力进行了测量。这种方法的优点在于利用多组试验数据求解多元线性回归方程,从而消除了一般单晶应变测定方法中无应变状态下晶面间距不准确对结果所带来的影响。该法可以推广应用于其他单晶体的应力测量和高织构取向材料的X射线应力测量。 The stresses of the Ge single crystal have been measured according to a new principle proposed by Hiroshi SUZUKI and the asymmetrical Bragg diffraction technique. Compared with the conventional methods, the new method can determine the stress by using multiple regression equations. So the effect of the reliability of the stress-free plane spacing can be avoided. The method may be applied to other single crystal materials and high textured orientation materials.
出处 《理化检验(物理分册)》 CAS 2008年第6期303-305,308,共4页 Physical Testing and Chemical Analysis(Part A:Physical Testing)
关键词 X射线衍射 锗单晶 应力 不对称布拉格衍射 X-ray diffraction Ge single crystal stress Asymmetrical Bragg diffraction
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参考文献5

  • 1黎建明,屠海令,胡广勇,王超群,郑安生,钱嘉裕.X射线三轴晶衍射法测量半绝缘GaAs单晶的化学配比[J].Journal of Semiconductors,2002,23(11):1187-1191. 被引量:1
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二级参考文献7

  • 1[9]Simmons G,Wang H.Single crystal elastic constants and calculated aggregate properties:a handbook.2nd Edition:England:Cambridge,Massachusetts and London,13
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  • 3[2]Dickey E C,Dravid V P,Hubbard C R.Interlamellar residual stresses in single grains of NiO-ZrO2(cubic) directionally solidified eutectics.JAm Ceram Soc,1997; 80:2773-2780
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  • 7王玉田,陈诺夫,何宏家,林兰英.半绝缘GaAs单晶化学配比的X射线双晶衍射Bond方法测量[J].Journal of Semiconductors,1998,19(4):267-274. 被引量:4

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