摘要
从模拟和实验两方面研究了SiGe/SiHBT发射结中pn结界面和SiGe/Si界面的相对位置对器件的电流增益和频率特性的影响 .发现两界面偏离时器件性能会变差 .尤其是当pn结位于SiGe/Si界面之前仅几十 就足以产生相当高的电子寄生势垒 ,严重恶化器件的性能 .据此分析了基区B杂质的偏析和外扩对器件的影响以及SiGe/Si隔离层的作用 .
The effects of the relative position between the interfaces of pn junction (emitter base) and SiGe/Si on the current gain and frequency performance of SiGe/Si HBT are investigated by simulation and experiment.It is found that the performance of the HBT will degrade as the two interfaces segregate,and a considerable parasitic barrier will be formed if SiGe/Si interface is only tens angstroms away from pn junction interface towards the base,drastically deteriorating the current gain and cutoff frequency.Based on this,the effects of B dopant segregation and out diffusion in the base of SiGe/Si HBT and i SiGe spacers are investigated.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2000年第8期63-65,共3页
Acta Electronica Sinica
基金
国家"8 63"计划!(No .863 30 7 1 5 4(6) )
国家自然科学基金!(No.698760 0 4 )
北京市科委高技术重点项目和北京市自然科学基金!(
