摘要
研究了应变单量子阱势阱宽度的计算方法 ,为应变单量子阱的设计提供了理论依据 .对于确定的材料组份 ,根据应变理论及有限深势阱的处理方法 ,系统地计算了 980 nm应变单量子阱宽度 。
A calculation method of strained single quantum well width is introduced. For a given material components, the width of 980 nm strained single quantum well is calculated according to the theory of strained effect and the processing method of the limited depth quantum well. The calculation value is in accord with the experiment result.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2000年第8期682-686,共5页
Chinese Journal of Lasers
