摘要
采用分子束外延（ＭＢＥ）技术，研制生长了ＩｎＧａＡｓ／ＧａＡｓ应变单量子阱激光器材料，并研究了生长温度及界面停顿生长对激光器性能的影响。结果表明，较高的ＩｎＧａＡｓ生长温度和尽可能短的生长停顿时间，将有利于降低激光器的阈值电流。所外延的激光器材料在２５０μｍ×５００μｍ宽接触、脉冲工作方式下测量的阈电流密度的典型值为１６０ｍＡ／ｃｍ２。用湿法腐蚀制作的４μｍ条宽的脊型波导激光器，阈值电流为１６ｎＡ，外微分量子效率为０４ｍＷ／ｍＡ，激射波长为９７６±２ｎｍ，线性输出功率为１００ｍＷ。
The straired layer In xGa 1-x As single quantum well lasers with a gade index separate confinement heterostructure were grown by molecular beam epitaxy(MBE).The effects of the growth temperature and growth interruption at the interrfaces on the threshold current density of the laser diodes were investigated.The results show that higher growth temperature and shorter trowth interruption time can reduce the threshold current density of the laser diodes.The broad area lasers(250μm×500μm)were fabricated,and tested under pulsed operation.Their threshold current densities were 160A/cm 2. Ridge waveguide diodes with 4μm wide waveguide were also fabricated by selective wet chemical etching.The threshold current was 16mA.The diodes have an external quantum efficiency of 0 40mW/mA,being single mode with a peak wavelength at 976±2nm.The output power without coating of the facets is 100mW.
出处
《电子显微学报》
CAS
CSCD
1997年第4期381-384,共4页
Journal of Chinese Electron Microscopy Society
