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在金属衬底上外延生长Ⅲ族氮化物及相关器件 被引量：3

Epitaxial Growth of Ⅲ Nitrides and Relevant Devices on Metal-Based Substrates
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摘要 通过分析对比蓝宝石衬底和金属衬底上外延生长Ⅲ族氮化物及相关器件的优缺点,指出了金属所具有的独特优异的物理及化学性能,以及金属作为衬底外延生长Ⅲ族氮化物及相关器件的重大意义。详细介绍了国内外在金属衬底上外延生长Ⅲ族氮化物及相关器件的研究状况及所发展的相关外延技术。相比金属有机物气相沉积技术和分子束外延技术,脉冲激光沉积技术可以实现Ⅲ族氮化物的低温外延生长,从而克服金属有机物气相沉积技术和分子束外延技术采用的高温生长而导致金属衬底与外延薄膜间发生的剧烈界面反应,可以直接在金属衬底上外延生长Ⅲ族氮化物及相关器件。脉冲激光沉积技术为在金属衬底上外延生长Ⅲ族氮化物及相关器件开拓了广阔的前景。 The comparison of advantages and disadvantages of growing Ⅲ nitrides and relevant devices on sapphire substrates and metal-based substrates are reviewed.And the significance of metal as substrates for the epitaxial growth of Ⅲnitrides and relevant devices on metal-based substrates for their unique excellent physical and chemical properties are pointed out.It describes in detail on the recent development of epitaxial growth of Ⅲ nitrides and relevant devices on metal-based substrates and the development of corresponding epitaxial growth technologies.Compared with metal-organic chemical vapor deposition（MOCVD） and molecular beam epitaxy（MBE）,pulsed laser deposition（PLD） has much lower growth temperature,and therefore could suppress the severe interfacial reactions between metal substrates and epilayers in the case of MOCVD or MBE growth,and accordingly could grown Ⅲ nitrides directly on metal-based substrates.The application of PLD sheds light on directly growing Ⅲ nitrides and relevant devices on metal-based substrates.
作者 王文樑 李国强
机构地区 华南理工大学发光材料与器件国家重点实验室
出处 《半导体技术》 CAS CSCD 北大核心 2012年第11期863-868,共6页 Semiconductor Technology
基金 国家自然科学基金(51002052) 国家重点基础研究发展计划(973计划)资助项目 广东省重大科技专项(2011A080801018) 凝固技术国家重点实验室开放基金(SKLSP201111)
关键词 Ⅲ族氮化物及相关器件 金属衬底 脉冲激光沉积技术 外延生长 界面反应 Ⅲ nitrides and relevant devices metal-based substrates pulsed laser deposition epitaxial growth interfacial reactions
分类号 TN304.2 [电子电信—物理电子学]
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参考文献57

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同被引文献24

  • 1宋世巍,梁红伟,申人升,柳阳,张克雄,夏晓川,杜国同.SiN插入层对GaN外延膜应力和光学质量的影响(英文)[J].发光学报,2013,34(8):1017-1021. 被引量：3
  • 2童杏林,罗梦泽,姜德生,刘忠明.GaN薄膜制备及脉冲激光沉积法的研究进展[J].激光杂志,2006,27(1):5-7. 被引量：5
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半导体技术
2012年 第11期

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