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应用于WLAN的SiGe射频功率放大器的设计 被引量:5

Design of SiGe RF Power Amplifier for WLAN
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摘要 采用0.18μm SiGe BiCMOS工艺,设计应用于无线局域网(WLAN)802.11b/g 2.4GHz频段范围内的AB类射频功率放大器.该放大器采用三级放大结构,偏置电路采用电流镜形式的自适应偏置控制电路,具有温度补偿和线性化作用.后仿真结果显示:1dB压缩点输出功率高达27.73dBm,功率增益为25.67dB,电路的S参数在2.4GHz频段内,输出匹配S22小于-10dB,S12小于-60dB. A RF power amplifier was designed for WLAN 802.11 b/g 2.4 GHz based on 0.18 /~m SiGe BiCMOS technology. The PA consists of three stage amplifiers working in Class AB. Adaptive bias circuit based on current mirror was used, with temperature compensation and linearization. The post-layout simu- lation results showed that the designed power amplifier had an output of 1 dB, a compression point of 27. 73 dBm, a power gain of 25.67 dB, an $22 of less than -- 10 dB and an S12 of less than -- 60 dB in 2.4 GHz.
出处 《湖南大学学报(自然科学版)》 EI CAS CSCD 北大核心 2012年第10期56-59,共4页 Journal of Hunan University:Natural Sciences
基金 国家科技重大专项项目(2011ZX02503) 湖南省科技计划资助项目(2011GK3129)
关键词 射频 功率放大器 SIGE ratio power amplifier ~ SiGe
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参考文献5

  • 1PENG Yan-jun, SONG Jia-you, WANG Zhi-gong. A 3. 3 V SiGe HBT power amplifier for 5 GHz WLAN application [C]//Solid-State and Integrated Circuit Technology. Shanghai:IEEE, 2006:1541-1543.
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二级参考文献9

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