摘要
基于0.18μm SiGe BiCMOS工艺,设计了一种应用于下一代移动通信3GPP LTE TDD2.6 GHz频段(Band38)的射频功率放大器(PA)芯片。射频功率放大器采用共发射极3级级联的全差分结构,提高了输出电压摆幅,减小了功率晶体管的集电极电流,且降低了寄生的键合线电感。在预放大级和中间放大级、功率级中分别设计了电阻偏置和有源偏置两种偏置电路以提高线性度性能,并通过MOS开关管实现功率控制功能。测试结果表明:在2.57～2.62 GHz工作频段内,正向增益S21大于30.5 dB,输入回波损耗S11和输出回波损耗S22分别均小于-13 dB,功率增益大于31 dB,输出1 dB压缩点功率达28.6 dBm,功率附加效率为18%。
Based on the 0.18 μm SiGe BiCMOS process,a kind of RF power amplifier（PA）chip applied to the next generation of mobile communications 3 GPP LTE TDD 2.6 GHz（Band38）was designed.The RF power amplifier adopted with common-emitter and three-stage emitter difference structure,improved output voltage swing,reduced the collector current of the power transistor,and reduced the parasitic bond-wire inductance.In order to improve the performance of linearity,resistor and active bias circuits were designed and used respectively in the first（pre-amplify）stage and second/last（power）stage,and power control was realized by using MOS switch transistor.Test results show that in working band of 2.57-2.62 GHz,the gain（S21）is greater than 30.5 dB,input and output return loss（S11 and S22）respectively are less than-13 dB,the power gain is greater than 31 dB,the 1 dB compression point of output power is 28.6 dBm,and the power additional rate is 18%.
出处
《半导体技术》
CAS
CSCD
北大核心
2012年第9期674-678,共5页
Semiconductor Technology
基金
上海市科技创新行动计划地方院校能力建设项目(10110502200)
教育部科学技术研究重点项目(210072)
