摘要
对瞬态模式LiNbO3抽头延迟线（TDL）外接P＋N二极管阵列结构的声表面波存储相关卷积器进行了详尽的理论分析，对影响器件性能的重要参量进行了分析计算，讨论了器件存储时间与二极管少子寿命的关系，给出了二极管在窄脉冲作用下的瞬态充电过程，并对研制的器件进行了测试，器件的效率为－76dBm。文中结论可用于这种结构器件的设计及优化。
In this paper, we present the detailed theoretical analysis of the surface acoustic wave memory correlator in the flash mode, composed of a LiNbO3 tapped-delay-line and a diode array. The important factors that influence the device performance are analyzed and calculated. The transient charging process of the diode array is given. The measurements were carried out for the device, showing the correlation efficiency is -76dBm. The results and the conclusions in this paper can be used for the design and optimization of SAW memory correlator of this structure.
出处
《半导体技术》
CAS
CSCD
北大核心
2000年第4期36-39,共4页
Semiconductor Technology
关键词
声表面波
存储相关卷积器
二极管
SAW memory correlator Diode array Minority carrier lifetime Flash mode
