5CHIU Chia-hsiang,LIN Chien-cheng.Microstructural development of the AlN/Ti diffusion couple annealed at 1 000 ℃[J].Journal of the American Ceramic Society,2008,91(4):1273-1280.
6YASUMOTO T,YAMAKAWA K,IWASE N,SHINOSAWA N.Reaction between AlN and metal thin films during high temperature annealing[J].Journal of the Ceramic Society of Japan,1993,101(9):969-973.
7HE Xiang-jun,YANG Si-ze,DU Yong,TAO Kun,FAN Yu-dian.Reaction layer formation at the interface between Ti or Zr and AlN[J].Physica Status Solidi (A),1996,157(1):99-106.
8CHIU C H,LIN C C.Formation mechanisms and atomic configurations of nitride phases at the interface of aluminum nitride and titanium[J].Journal of Materials Research,2008,23(8):2221-2228.
9SHALISH I,SHAPIRA Y.Thermal stability of a Ti-Si-N diffusion barrier in contact with a Ti adhesion layer for Au metallization[J].J Vac Sci Technol B,1999,17(1):166-173.
10HOGLUND C,BECKERS M,SCHELL N,BORANY J V,BIRCH J,HULTMAN L.Topotaxial growth of Ti2AlN by solid state reaction in AlN/Ti(0001) multilayer thin films[J].Appl Phys Lett,2007,90:174106-1-174106-3.
