期刊文献+

铜-氮化铝陶瓷键合机理的探讨 被引量:4

Study of the Mechanism of Copper Direct Bonding AlN Ceramic
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摘要 在一定的温度下 ,由于适量的氧元素的引入 ,铜的表面将形成一层Cu Cu2 O共晶熔体 ,通过这一共晶熔体可以将铜与许多陶瓷键合在一起。研究了铜与氮化铝陶瓷直接键合的可行性 ,运用扫描电镜 (SEM )、电子能谱(EDX)对键合机理作了一定的分析和探讨。 Cu Cu 2O eutectic would be formed on the surface of the copper due to the introduction of proper oxygen at high temperature.Copper would be bonded directly on many ceramics through this eutectic.In this paper,the possibility of copper direct bonding to aluminum nitride substrate is studied,and the bonding mechanism is investigated by means of SEM and EDX.
出处 《电力电子技术》 CSCD 北大核心 2000年第3期55-56,60,共3页 Power Electronics
关键词 铜-氮化铝陶瓷 键合 电力电子模块 power electronic module copper AlN ceramic bonding
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参考文献4

  • 1刘联宝.陶瓷-金属封接技术指南[M].北京:国防工业出版社,1989..
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二级参考文献1

  • 1[德]鲁企卡(G·Routschka)等 著,钱承欣,石英宜.有色金属冶炼用耐火材料[M]冶金工业出版社,1984.

共引文献5

同被引文献14

  • 1刘鑫,张小勇,陆艳杰,方针正,楚建新.AlN陶瓷与无氧铜的活性封接[J].真空电子技术,2007,20(4):56-58. 被引量:7
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  • 6ZHANG Chun-guang,QIAO Guan-jun,JIN Zhi-hao.Active Brazing of Pure Alumina to Kovar Alloy Based on the Partial Transient Liquid Phase (PTLP) Technique with Ni-Ti Interlayer[-J].Journal of the European Ceramic Society,2002,(22):2181-2186.
  • 7Taranets N Y,Jones H.Wettability of Aluminium Nitride Based Ceramics of Different Porosity by Two Active Silver Based Brazing Alloys[J].Materials Science and Engineering A,2004,(379):251-257.
  • 8Dezellus O,Andrieux J,Bosselet F,et al.Transient Liquid Phase Bonding of Titanium to Aluminium Nitride[J].Materials Science and Engineering A,2008.
  • 9白杰,李磊.VVVF变频器专用模块的制作技术[J].电力电子技术,2014年第8期.
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引证文献4

二级引证文献7

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