期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

温度梯度铁电薄膜的极化偏移特性研究

Investigations on polarization offset of temperature-graded ferroelectric thin films
在线阅读 下载PDF
导出
摘要 采用平均场近似下的横场伊辛模型理论,同时考虑了遂穿频率与温度的相互关系,重点研究了BaTiO3温度梯度铁电薄膜的极化偏移特性.研究表明:量子起伏效应对于温度梯度铁电薄膜的性质有重要的影响,在低温区量子起伏效应尤其显著;温度梯度的存在导致了薄膜内部的极化强度的梯度分布;对于下温度梯度铁电薄膜来说,当量子起伏效应达到足够强时,可以改变极化梯度和极化偏移的方向. A transverse Ising model in the framework of the mean field approximation is adopted,the relationship between the tunneling frequency and temperature is also considered.It mainly investigates the polarization offset of BaTiO3 temperature-graded ferroelectric thin film.It was shown that quantum fluctuation effect has very important influence on properties of temperature-graded ferroelectric thin films,especially at low temperature region;temperature-graded leads to graded polarization distribution;for down-temperature-graded films,when quantum fluctuation effect is strong enough,which can change the directions of polarization gradient and polarization offset.Some of our results are qualitatively agree with the experimental data.
作者 陈辉 成泰民 陈思群
机构地区 沈阳化工大学数理系
出处 《东北师大学报（自然科学版）》 CAS CSCD 北大核心 2012年第3期69-73,共5页 Journal of Northeast Normal University(Natural Science Edition)
基金 国家自然科学基金资助项目(10647148) 辽宁省科研基金资助项目(20060667)
关键词 温度梯度 自发极化 相变温度 极化偏移 temperature gradient； spontaneous polarization； phase transition temperature； polarization offset
分类号 O482.4 [理学—固体物理]
  • 相关文献

参考文献16

  • 1FELLBERG W, MANTESE J, SCHUBRING N, et al. Origin of the "up," "down" hysteresis offsets observed from polarization- graded ferroelectric materials[J]. Appl Phys Lett,2001,78(4):524-526.
  • 2ALPAY S P, BAN Z G, MANTESE J V. Thermodynamic analysis of temperature-graded ferroelectrics[J]. Appl Phys Lett, 2003,82(8) :1269-1271.
  • 3ZHANG Q T, PONOMAREVA I. Microscopic insight into temperature-graded ferroelectrics[J]. Phys Rev Lett, 2010, 105: 147602-1-147602-4.
  • 4WU D, WU H, FU Z, et al. Polarization offsets of compositionally graded Nd-substituted Bi4Ti3O12 ferroelectric thin films[J]. Appl Phys Lett,2008,93:062904-1-062904-3.
  • 5ZHANG J,TANG M H,TANG J X, et al. Bilayer model of polarization offset of compositionally graded ferroelectric thin films [J]. Appl Phys Lett, 2007,91 (16): 162908-1-162908-3.
  • 6CHAN H K, LAM C H, SHIN F G. Time dependent space-charge limited conduction as a possible origin of the polarization offsets observed in compositionally graded ferroelectric films[J]. J Appl Phys,2004,95:2665-2671.
  • 7OKATAN M B, MANTESE J V, ALAPY S P. Polarization coupling in ferroelectric multilayers[J]. Phys Rev B, 2009, 79:174113.
  • 8ZHONG S, BAN Z G, ALPAY S P,Larger piezoelectric strains from polarization graded ferroelectrics[J]. Appl Phys Lett, 2006,89 : 142913.
  • 9AKCAY G, ZHONG S, ALLIMI B S, et al. Strain induced internal potentials of compositionally graded epitaxial ferroelectric thin films[J]. Appl Phys Lett,2007,91(1) :012904.
  • 10ZHOU Y, CHAN H K, LAM C H, et al. Effects of polarization and permittivity gradients and other parameters on the anomalous vertical shift behavior of graded ferroelectric thin films[J]. J Appl Phys, 2005,98(3)- 034105.

二级参考文献21

  • 1王英龙,魏同茹,刘保亭,邓泽超.外延PbZr_(0.4)Ti_(0.6)O_3薄膜厚度对其铁电性能的影响[J].物理学报,2007,56(5):2931-2936. 被引量：12
  • 2B. T. Liu, C. S. Cheng, F. Li, et al. Ni - AI diffusion barrier layer for integrating ferroelectric capacitors on Si [J]. Applied Physics Letters, 2006, 88: 252903(1-3).
  • 3Yi Wang, B.T. Liu, Feng Wei, et al. Fabrication and electrical properties of (111) textured Ba0.4Sr0.4TiO3 film on platinized Si substrate[J]. Applied Physics Letters, 2007, 90: 042905(1- 3).
  • 4Ying-Long Wang, Xing Yuan Wang, Li-Zhi Chu, et al. Dynamic investigations of the initial polarization curves and hysteresis loops of PbTiO3 by a lattice model [J]. Physics. Letters. A, 2009, 373:4282-4286.
  • 5B. T. Liu,X. B. Yan, X. Zhang, et al. Barrier performance of ultrathin Ni-Ti film for integrating ferroelectric capacitors on Si[J].Applied Physics Letters, 2007, 91: 142908(1-3).
  • 6B. T. Liu, Maki K , Agganval S, et al. Low-temperature integration of lead-based ferroeleetric capacitors on Si with diffusion barrier layer [J]. Applied Physics Letters, 2002, 80: 3599-3601.
  • 7Whitney Fellberg, Joseph Mantese, Norman Schubring, et al. Origin of the "up", "down" hysteresis offsets observed from polarization-graded ferroelectric materials[J].Applied Physics Letters, 2001, 78:524-526.
  • 8S. P. Alpay, Z.-G. Ban, J. V. Mantese. Thermodynamic analysis of temperature-graded ferroeleetries [J]. Applied Physics Letters, 2003, 82:1269-1271.
  • 9Z.-G. Ban, S. P. Alpay, J. V. Mantese. Fundamentals of graded ferroic materials and devices[J].Physics Review B,2003, 67:184104 (1-6).
  • 10S. Zhong, S. P. Alpay, Z.-G. Ban, et al. Effective pyroelectric response of compositionally graded ferroelectric materials[J]. Applied Physics Letters, 2005, 86 : 092903 ( 1 - 3).

共引文献4

东北师大学报（自然科学版）
2012年 第3期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部