摘要
通过对陶瓷电镀件进行不同温度的热处理后,分别用Cu、Ag和AgCu28焊料与可伐和无氧铜封接。随着热处理温度的提高,发现某些封接件的封接强度及封接界面的显微结构发生了改变。综合各种因素后提出热处理温度不能超过850℃。
After Being heated at different temperature, plated ceramic devices were copper by Cu.Ag and AgCu28 solder. With the increasing of heating temperature,We ges in both the sealing strength and microstructure of the interface. According to the temperature is suggested to below 850℃. sealed with kovar or dan find some chan- results, the heating
出处
《真空电子技术》
2012年第4期16-20,共5页
Vacuum Electronics
关键词
热处理温度
陶瓷
金属
焊料
Heat treatment, Ceramic, Metal, Solder
