摘要
利用等离子体化学气相（MWPCVD）沉积法在Si（100）面上沉积了金刚石薄膜，采用SEM、AFM、XRD、Raman、XPS等方法对薄膜的结构及表面形貌进行了分析。为提高薄膜的场发射性能，在金刚石表面溅射了金属Ti，对比金刚石薄膜、金刚石／金属Ti复合薄膜的场发射性能，结果表明，金刚石／金属Ti薄膜的发射电流密度更大，且随着电场的增加电流密度急剧增加，开启电场低，约为3V／μm，当电场为25V／μm时发射电流密度可达到1400mA／cm2，并在机理上进行了一些探索，对金刚石／金属复合结构薄膜的场发射性能研究有重要意义。
Diamond film and diamond/Ti film were synthesized by microwave plasma chemical vapor deposition （MW- PCVD） method on Si（100）. The surface morphology and the structure of the films were tested by Scanning Electron Micro- scope（SEM） ,Atomic Force Microscope （AFM）.Raman,X-ray diffraction （XRD）.Possible mechanism in the paper were al- so studied.In order to improve the field emission properties of thin films, sputtered the metal of Ti on the diamond sur- face, Compared the field emission properties of diamond and diamond ]Ti films. The results showed that diamond FFi film had larger emission current. Field emission current density increased rapidly with the increasing of electric field and reaches to 1400μA/cm2 at 25V/μm. Also take some exploration in the mechanism, which has great meaning to the re- search of field emission properties of diamond / metal composite structure films.
基金
国家自然科学基金项目（No.51002143,No.51072184）,航空基金项目（No.2009ZE55003,No.2010ZF55013）,河南省科技厅项目（No.092300410139）,河南省高等学校青年骨干教师资助计划项目（2010GGJS-146）,河南省教育厅自然科学基础研究计划项目（No.20108140015,No.2011A140027）
