摘要
研制出满足 Si1 - x Gex 异质结薄膜材料生长工艺的高真空化学气相外延炉。介绍了 Si1 - x Gex 异质结薄膜材料的生长工艺 ,详述了该气相外延设备的性能指标、结构组成和设计原理 ,并且给出了利用该设备生长Si1 - x Gex 异质薄膜的实验结果。
The high vacuum chemical vapour deposition(HV CVD) furnace has been developed for the growth of Si 1-x Ge x heterostructure material. The technology of growth Si 1-x Ge x heterostructure epitaxial layer is introduced. The constitution, construction and design principle of the HV CVD furnace are described. Also the conclusion of growth the Si 1-x Ge x heterostructure epitaxial layer using this furnace has been given.
出处
《真空》
CAS
北大核心
2000年第4期31-35,共5页
Vacuum
关键词
锗硅异质结构
高真空化学气相色延炉
薄膜制备
high vacuum chemical vapour deposition
vapour deposition furnace
moleculer pump
SiGe heterostructure
