摘要
用阳极腐蚀的方法制备了多孔硅样品，用电化学方法在多孔硅中注入Er3+、In3+等金属离子，并对注入离子后多孔硅的光致荧光光谱进行了研究，结果表明：注入Er3+及In3+后的多孔硅在588nm处的发光峰强度大大增加，同时发光峰稍有展宽。随着离子注入时间的增长，强度继续增加，但当离子溶液浓度一定时，这种增强对时间具有饱和性．
The porous silicon (PS) samples were prepared by anodic etching method, and the Er3+, In3+ were implanted into the PS samples by plating method. The results show that the implantation of such ions improves greatly the intensity of photoluminescence (PL) of the PS samples and makes the PL peak slightly blue-shift. With the increase of the plating time, the intensity of the PL increases continuously, but it has a saturation property to the plating time.
基金
河南省自然科学基金
河南省教委资助
