摘要
稀土离子Ｅｒ注入多孔硅中．在３５０ｋｅＶ能量，１×１０（１２）～１×１０（１５）／ｃｍ２剂量范围内，注入后的多孔硅仍保持明亮的可见光发射．退火后，在近红外区测到１．５４μｍ附近Ｅｒ（３＋）的特征发射．其发射强度比硅单晶对照样品明显增强，实验表明这增强作用来源于多孔硅的表面发光层．电化学制备过程中在表面层中带入的Ｏ、Ｃ、Ｆ等多种杂质可能是Ｅｒ（３＋）发光增强的原因．
are earth ion Er+ has been implanted in porous silicon at 350 keV ion energy in 1×1012～1×1015cm2 dose range. After implantation the porous silicon still presented bright visible emission. After annealing, 1. 54 μm characteristic emissions of Er3+ in PSi have been measured, and its intensity is much more intense than that of Si processed by same conditions. Further experiments show that enhancement of the Er3+ emission relates to the surface layer of porous silicon. There are a lot of impurity in the surface layer, such as O, C, F etc. Those impurities can form a variety of complex with Er which is favourable for decreasing segregation of Er during annealing, and increasing Er concentration. It is probable that the impurities introduced by electrochemical process give'rise to 1. 54 μm luminescence enhancement.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1996年第1期33-37,共5页
Chinese Journal of Luminescence
基金
国家自然科学基金
中国科学院基金
关键词
多孔硅
发光
离子注入
铒
porous silicon, erbium, luminescence, ion implantation
